2SC6026CT-GR,L3F
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- Mfr.Part #
- 2SC6026CT-GR,L3F
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- SC-101, SOT-883
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A CST3
- Stock
- 42,900
- In Stock ：
- 42,900
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 60MHz
- Operating Temperature :
- 150°C (TJ)
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Supplier Device Package :
- CST3
- Series :
- -
- Power - Max :
- 100 mW
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA, 6V
- Base Product Number :
- 2SC6026
- Product Status :
- Active
- Package / Case :
- SC-101, SOT-883
- Mounting Type :
- Surface Mount
- Package :
- Digi-Reel?
- Current - Collector (Ic) (Max) :
- 100 mA
- Datasheets
- 2SC6026CT-GR,L3F
NPN 150°C (TJ) 100nA (ICBO) SC-101, SOT-883 Surface Mount
2SC6026CT-GR,L3F Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA, 6V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.This product comes in a CST3 device package from the supplier.Device displays Collector Emitter Breakdown (50 V maximal voltage).
2SC6026CT-GR,L3F Features
the DC current gain for this device is 200 @ 2mA, 6V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the supplier device package of CST3
2SC6026CT-GR,L3F Applications
There are a lot of Toshiba Semiconductor and Storage
2SC6026CT-GR,L3F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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