2STR1215
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- Mfr.Part #
- 2STR1215
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 15V 1.5A SOT23-3
- Stock
- 13,556
- In Stock ：
- 13,556
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Max Power Dissipation :
- 500mW
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Width :
- 1.3mm
- Pin Count :
- 3
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Height :
- 950μm
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 500mW
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Max Collector Current :
- 1.5A
- Length :
- 2.9mm
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 15V
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 850mV @ 200mA, 2A
- Operating Temperature :
- -65°C~150°C TJ
- Base Part Number :
- 2STR
- Element Configuration :
- Single
- Factory Lead Time :
- 8 Weeks
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Breakdown Voltage :
- 15V
- Terminal Form :
- Gull wing
- Collector Emitter Saturation Voltage :
- 850mV
- Max Breakdown Voltage :
- 15V
- Collector Emitter Voltage (VCEO) :
- 15V
- Datasheets
- 2STR1215
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2STR1215 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 500mA 2V.With a collector emitter saturation voltage of 850mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 850mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 15V volts that it can take.Collector current can be as low as 1.5A volts at its maximum.
2STR1215 Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 850mV
the vce saturation(Max) is 850mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
2STR1215 Applications
There are a lot of STMicroelectronics
2STR1215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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