2STR1230
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- Mfr.Part #
- 2STR1230
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 1.5A SOT23-3
- Stock
- 4,529
- In Stock ：
- 4,529
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Length :
- 2.9mm
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 850mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 500mA 2V
- Base Part Number :
- 2STR
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 30V
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Termination :
- SMD/SMT
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 30V
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Power Dissipation :
- 500mW
- Power Dissipation :
- 500mW
- Vce Saturation (Max) @ Ib, Ic :
- 850mV @ 200mA, 2A
- hFE Min :
- 210
- Max Collector Current :
- 1.5A
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 30V
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 30V
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Width :
- 1.3mm
- Height :
- 950μm
- Current Rating :
- 1.5A
- Voltage - Rated DC :
- 30V
- Datasheets
- 2STR1230
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2STR1230 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 850mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 850mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 1.5A volts.
2STR1230 Features
the DC current gain for this device is 180 @ 500mA 2V
a collector emitter saturation voltage of 850mV
the vce saturation(Max) is 850mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
2STR1230 Applications
There are a lot of STMicroelectronics
2STR1230 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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