APT11GF120BRDQ1G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Single

Terminal Finish :

TIN SILVER COPPER

Max Collector Current :

25A

Current Rating :

25A

Radiation Hardening :

No

Td (on/off) @ 25°C :

7ns/100ns

Packaging :

Tube

Number of Pins :

3

Element Configuration :

Single

Turn On Time :

12 ns

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Published :

2005

Current - Collector Pulsed (Icm) :

24A

Number of Elements :

1

Turn Off Time-Nom (toff) :

161 ns

Package / Case :

TO-247-3

Switching Energy :

300μJ (on), 285μJ (off)

Gate Charge :

65nC

Polarity/Channel Type :

N-Channel

Voltage - Collector Emitter Breakdown (Max) :

1200V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

IGBT Type :

NPT

Voltage - Rated DC :

1.2kV

Test Condition :

800V, 8A, 10 Ω, 15V

Pin Count :

3

JESD-609 Code :

e1

Number of Terminations :

3

Mount :

Through Hole

Collector Emitter Voltage (VCEO) :

3V

Transistor Application :

POWER CONTROL

Pbfree Code :

yes

RoHS Status :

RoHS Compliant

Mounting Type :

Through Hole

Additional Feature :

ULTRA FAST

Max Power Dissipation :

156W

JEDEC-95 Code :

TO-247AC

Operating Temperature :

-55°C~150°C TJ

Input Type :

Standard

Vce(on) (Max) @ Vge, Ic :

3V @ 15V, 8A

Collector Emitter Breakdown Voltage :

1.2kV