APT15GN120KG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Single

Collector Emitter Breakdown Voltage :

1.2kV

Gate-Emitter Thr Voltage-Max :

6.5V

IGBT Type :

Trench Field Stop

Turn Off Time-Nom (toff) :

355 ns

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

RoHS Compliant

Max Power Dissipation :

195W

Switching Energy :

410μJ (on), 950μJ (off)

Packaging :

Tube

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Td (on/off) @ 25°C :

10ns/150ns

Published :

2004

Terminal Finish :

PURE MATTE TIN

Polarity/Channel Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

Voltage - Rated DC :

1.2kV

Transistor Application :

POWER CONTROL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Series :

POWER MOS 7®

Current Rating :

45A

Lead Free :

Lead Free

Test Condition :

800V, 15A, 4.3 Ω, 15V

Turn On Time :

19 ns

Mount :

Through Hole

Max Collector Current :

45A

JESD-609 Code :

e3

Input Type :

Standard

Radiation Hardening :

No

Number of Terminations :

3

Package / Case :

TO-220-3

Gate-Emitter Voltage-Max :

30V

Element Configuration :

Single

Mounting Type :

Through Hole

Collector Emitter Voltage (VCEO) :

1.2kV

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 15A

Gate Charge :

90nC

Pbfree Code :

yes

Voltage - Collector Emitter Breakdown (Max) :

1200V