APT20GF120BRDQ1G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Single

Voltage - Rated DC :

1.2kV

Package / Case :

TO-247-3

Voltage - Collector Emitter Breakdown (Max) :

1200V

Collector Emitter Voltage (VCEO) :

3.2V

RoHS Status :

RoHS Compliant

Current Rating :

36A

Gate Charge :

100nC

Mounting Type :

Through Hole

Current - Collector Pulsed (Icm) :

64A

Terminal Finish :

TIN SILVER COPPER

Collector Emitter Breakdown Voltage :

1.2kV

Transistor Application :

POWER CONTROL

Pin Count :

3

IGBT Type :

NPT

Case Connection :

COLLECTOR

Transistor Element Material :

SILICON

Number of Terminations :

3

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Td (on/off) @ 25°C :

10ns/120ns

Vce(on) (Max) @ Vge, Ic :

3.2V @ 15V, 15A

Switching Energy :

895μJ (on), 840μJ (off)

Gate-Emitter Thr Voltage-Max :

6.5V

Pbfree Code :

yes

Number of Elements :

1

Input Type :

Standard

Turn On Time :

19 ns

Test Condition :

800V, 15A, 4.3 Ω, 15V

Mount :

Through Hole

Max Collector Current :

36A

Turn Off Time-Nom (toff) :

255 ns

Radiation Hardening :

No

Element Configuration :

Single

Published :

2005

Polarity/Channel Type :

N-Channel

Max Power Dissipation :

200W

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e1

Number of Pins :

3