APT50GP60BG

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Gate Charge :

165nC

Switching Energy :

465μJ (on), 637μJ (off)

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 50A

Operating Temperature :

-55°C~150°C TJ

Series :

POWER MOS 7®

Input Type :

Standard

Transistor Element Material :

SILICON

Case Connection :

COLLECTOR

Terminal Finish :

TIN SILVER COPPER

JESD-609 Code :

e1

Number of Elements :

1

Max Power Dissipation :

625W

Packaging :

Tube

Test Condition :

400V, 50A, 5 Ω, 15V

Additional Feature :

LOW CONDUCTION LOSS

Lead Free :

Lead Free

Current - Collector Pulsed (Icm) :

190A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Radiation Hardening :

No

Package / Case :

TO-247-3

Pbfree Code :

yes

Current Rating :

100A

RoHS Status :

RoHS Compliant

Polarity/Channel Type :

N-Channel

Transistor Application :

POWER CONTROL

IGBT Type :

PT

Collector Emitter Breakdown Voltage :

600V

Td (on/off) @ 25°C :

19ns/83ns

Mount :

Through Hole

Turn On Time :

55 ns

Published :

1999

Max Collector Current :

100A

Turn Off Time-Nom (toff) :

202 ns

JEDEC-95 Code :

TO-247AD

Mounting Type :

Through Hole

Pin Count :

3

JESD-30 Code :

R-PSFM-T3

Voltage - Rated DC :

600V

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

600V