APT50GT120B2RDLG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Single

Polarity/Channel Type :

N-Channel

Collector Emitter Voltage (VCEO) :

1.2kV

Vce(on) (Max) @ Vge, Ic :

3.7V @ 15V, 50A

Current - Collector Pulsed (Icm) :

150A

Operating Temperature :

-55°C~150°C TJ

Case Connection :

COLLECTOR

Turn Off Time-Nom (toff) :

305 ns

Voltage - Collector Emitter Breakdown (Max) :

1200V

ECCN Code :

EAR99

Test Condition :

800V, 50A, 4.7 Ω, 15V

Radiation Hardening :

No

Transistor Application :

Motor Control

Power - Max :

694W

JEDEC-95 Code :

TO-247AD

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Switching Energy :

3585μJ (on), 1910μJ (off)

IGBT Type :

NPT

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Additional Feature :

LOW CONDUCTION LOSS

Turn On Time :

73 ns

Mounting Type :

Through Hole

Series :

Thunderbolt IGBT®

Gate Charge :

240nC

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Pin Count :

3

JESD-30 Code :

R-PSFM-T3

Pbfree Code :

yes

JESD-609 Code :

e1

Element Configuration :

Single

Td (on/off) @ 25°C :

23ns/215ns

Input Type :

Standard

Number of Terminations :

3

Packaging :

Tube

Max Collector Current :

106A

Package / Case :

TO-247-3 Variant

Number of Elements :

1

Collector Emitter Breakdown Voltage :

1.2kV

Published :

1999

Max Power Dissipation :

694W