APT60N60SCSG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Voltage (Vdss) :

600V

Gate to Source Voltage (Vgs) :

30V

Packaging :

Bulk

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

7200pF @ 25V

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

45m Ω @ 44A, 10V

Operating Temperature :

-55°C~150°C TJ

Published :

1997

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

431W

Qualification Status :

Not Qualified

Number of Elements :

1

Power Dissipation-Max :

431W Tc

Vgs(th) (Max) @ Id :

3.9V @ 3mA

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

600V

Pin Count :

3

RoHS Status :

RoHS Compliant

Terminal Form :

Gull wing

Terminal Finish :

Pure Matte Tin (Sn)

Pbfree Code :

yes

FET Feature :

Super Junction

Terminal Position :

Single

Mount :

Surface Mount

Additional Feature :

AVALANCHE ENERGY RATED

Continuous Drain Current (ID) :

60A

FET Type :

N-Channel

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Drain-source On Resistance-Max :

0.045Ohm

Factory Lead Time :

25 Weeks

Peak Reflow Temperature (Cel) :

245

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Mounting Type :

Surface Mount

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V