AS4C16M16D1-5BCN

- Mfr.Part #
- AS4C16M16D1-5BCN
- Manufacturer
- Alliance Memory, Inc.
- Package / Case
- 60-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 256MBIT PARALLEL 60TFBGA
- Stock
- 83





- In Stock :
- 83
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- Manufacturer :
- Alliance Memory, Inc.
- Product Category :
- Memory
- Refresh Cycles :
- 8192
- Pin Count :
- 60
- Memory Format :
- DRAM
- Terminal Pitch :
- 1mm
- Operating Temperature :
- 0°C~70°C TA
- Interleaved Burst Length :
- 248
- Mounting Type :
- Surface Mount
- Published :
- 2013
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Length :
- 13mm
- Height Seated (Max) :
- 1.2mm
- Operating Supply Voltage :
- 2.5V
- Terminal Position :
- BOTTOM
- Surface Mount :
- yes
- Number of Terminations :
- 60
- Supply Current-Max :
- 0.235mA
- Memory Width :
- 16
- ECCN Code :
- EAR99
- Voltage - Supply :
- 2.3V~2.7V
- Operating Mode :
- SYNCHRONOUS
- Number of Functions :
- 1
- JESD-609 Code :
- e1
- Memory Size :
- 256Mb 16M x 16
- I/O Type :
- COMMON
- Memory Interface :
- Parallel
- Qualification Status :
- Not Qualified
- Packaging :
- Tray
- Output Characteristics :
- 3-STATE
- Factory Lead Time :
- 8 Weeks
- Supply Voltage :
- 2.5V
- RoHS Status :
- ROHS3 Compliant
- Access Time :
- 700ps
- Number of Ports :
- 1
- HTS Code :
- 8542.32.00.24
- Density :
- 256 Mb
- Pbfree Code :
- yes
- Write Cycle Time - Word, Page :
- 15ns
- Supply Voltage-Min (Vsup) :
- 2.3V
- Peak Reflow Temperature (Cel) :
- 260
- Organization :
- 16MX16
- Clock Frequency :
- 200MHz
- Sequential Burst Length :
- 248
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Address Bus Width :
- 13b
- Number of Pins :
- 60
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Supply Voltage-Max (Vsup) :
- 2.7V
- Package / Case :
- 60-TFBGA
- Memory Type :
- Volatile
- Standby Current-Max :
- 0.04A
- Additional Feature :
- AUTO/SELF REFRESH
- Datasheets
- AS4C16M16D1-5BCN

[Memory Alliance Memory, Inc. AS4C16M16D1-5BCN] Overview
Introducing the cutting-edge IC DRAM 256MBIT PARALLEL 60TFBGA from Alliance Memory, Inc. This dynamic random-access memory (DRAM) solution stands as a testament to advanced engineering and superior performance. Designed to meet the demands of modern electronics, it offers unparalleled reliability and efficiency.
With its compact 60TFBGA form factor, this IC DRAM module integrates seamlessly into various electronic devices, ensuring optimal space utilization and streamlined functionality. Whether utilized in consumer electronics, industrial applications, or automotive systems, this memory solution delivers unmatched performance, making it the preferred choice for businesses seeking top-tier components.
Engineered with precision and backed by Alliance Memory, Inc.'s reputation for excellence, the AS4C16M16D1-5BCN sets a new standard for memory solutions in the digital era.
[AS4C16M16D1-5BCN] Features
- IC DRAM 256MBIT PARALLEL
- Advanced 60TFBGA package
- High-speed data transfer capabilities
- Enhanced reliability and durability
- Optimized for power efficiency
- Wide operating temperature range
- RoHS compliant
[AS4C16M16D1-5BCN] Applications
- Consumer Electronics: Empower next-generation smartphones, tablets, and gaming consoles with seamless multitasking and lightning-fast data access.
- Industrial Automation: Enhance the performance of industrial control systems, robotics, and manufacturing equipment, ensuring reliable operation in demanding environments.
- Automotive Systems: Enable advanced infotainment systems, driver assistance features, and vehicle networking capabilities, providing a superior driving experience while ensuring safety and reliability on the road.
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