BC237A_J35Z
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- Mfr.Part #
- BC237A_J35Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A TO92-3
- Stock
- 4,526
- In Stock ：
- 4,526
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- TO-92-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 5V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Transistor Type :
- NPN
- Power - Max :
- 500mW
- Frequency - Transition :
- 250MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Current - Collector (Ic) (Max) :
- 100mA
- Packaging :
- Bulk
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 15nA
- Mounting Type :
- Through Hole
- Base Part Number :
- BC237
- Datasheets
- BC237A_J35Z
NPN 150°C TJ 15nA TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Bulk Through Hole
BC237A_J35Z Overview
In this device, the DC current gain is 120 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Supplier device package TO-92-3 comes with the product.The device exhibits a collector-emitter breakdown at 45V.
BC237A_J35Z Features
the DC current gain for this device is 120 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the supplier device package of TO-92-3
BC237A_J35Z Applications
There are a lot of ON Semiconductor
BC237A_J35Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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