BC516
- Mfr.Part #
- BC516
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 1A TO92-3
- Stock
- 14,919
- In Stock :
- 14,919
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Frequency - Transition :
- 200MHz
- hFE Min :
- 30000
- Current Rating :
- -1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30000 @ 20mA 2V
- Collector Emitter Saturation Voltage :
- 1V
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 30V
- Current :
- 4A
- Continuous Collector Current :
- 1A
- Mounting Type :
- Through Hole
- Transition Frequency :
- 200MHz
- Length :
- 5.2mm
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Weight :
- 200.005886mg
- Voltage :
- 30V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- 10V
- Packaging :
- Bulk
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 40V
- Width :
- 4.19mm
- Number of Pins :
- 3
- Base Part Number :
- BC516
- Max Collector Current :
- 1A
- Number of Elements :
- 1
- RoHS Status :
- RoHS Compliant
- Power Dissipation :
- 625mW
- Published :
- 2015
- Terminal Position :
- BOTTOM
- Voltage - Rated DC :
- -30V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- Max Power Dissipation :
- 625mW
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Polarity :
- PNP
- Height :
- 5.33mm
- Collector Emitter Voltage (VCEO) :
- 30V
- Transistor Type :
- PNP - Darlington
- Datasheets
- BC516

PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
Description
The BC516 is a PNP Darlington Transistor designed for applications requiring extremely high current gain at currents to 1A. The Darlington configuration, also known as a Darlington pair in electronics, is a circuit made up of two bipolar transistors with one transistor's emitter connected to the other's base, causing the current to increase by the first transistor to be amplified even more by the second. Both transistors' collectors are interconnected. Comparing this setup to each transistor alone, the current gain is significantly higher. It functions like a transistor and is frequently packaged in that way.
Features
-
-55 to 150°C Operating junction temperature range
-
This device is designed for applications reguiring extremely high current gain at currents to 1A
-
Higher switched currents
-
Available in a variety of single packages
-
A very high input impedance for the circuit
Applications
-
Power Management
-
Industrial
-
Safety
-
Amplification
-
Motors or Relays
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