BC640TA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Saturation Voltage :

-500mV

Number of Pins :

3

hFE Min :

40

Voltage :

80V

Factory Lead Time :

6 Weeks

Transistor Application :

SWITCHING

Max Collector Current :

1A

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2007

Current Rating :

-1A

Voltage - Rated DC :

-80V

Element Configuration :

Single

REACH SVHC :

No SVHC

Weight :

240.007063mg

Transistor Type :

PNP

Polarity/Channel Type :

PNP

JESD-609 Code :

e3

Length :

4.58mm

Radiation Hardening :

No

Pbfree Code :

yes

Packaging :

Tape and Box (TB)

Terminal Position :

BOTTOM

Current :

1A

Current - Collector Cutoff (Max) :

100nA ICBO

Gain Bandwidth Product :

100MHz

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Max Power Dissipation :

1W

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Mounting Type :

Through Hole

ECCN Code :

EAR99

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

80V

Mount :

Through Hole

Collector Base Voltage (VCBO) :

-100V

Frequency :

100MHz

Contact Plating :

Tin

Transition Frequency :

100MHz

Base Part Number :

BC640

Emitter Base Voltage (VEBO) :

5V

Width :

3.86mm

Number of Terminations :

3

Power Dissipation :

1W

Max Breakdown Voltage :

80V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Operating Temperature :

150°C TJ

Collector Emitter Breakdown Voltage :

80V

Height :

4.58mm