BC640,126

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

AMPLIFIER

Transition Frequency :

100MHz

Transistor Type :

PNP

Configuration :

Single

Power - Max :

830mW

Voltage - Collector Emitter Breakdown (Max) :

80V

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Operating Temperature :

150°C TJ

Power Dissipation-Max (Abs) :

0.8W

Surface Mount :

No

Current - Collector Cutoff (Max) :

100nA ICBO

Qualification Status :

Not Qualified

Published :

2004

ECCN Code :

EAR99

JESD-30 Code :

O-PBCY-T3

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Packaging :

Tape and Box (TB)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

PNP

VCEsat-Max :

0.5 V

Peak Reflow Temperature (Cel) :

250

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

63 @ 150mA 2V

HTS Code :

8541.21.00.95

Reach Compliance Code :

Unknown

Current - Collector (Ic) (Max) :

1A

Frequency - Transition :

145MHz

Base Part Number :

BC640

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Terminal Position :

BOTTOM