BC817,235
- Mfr.Part #
- BC817,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A TO236AB
- Stock
- 1,706,896
- In Stock :
- 1,706,896
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Published :
- 2009
- Frequency :
- 100MHz
- Series :
- Automotive, AEC-Q101
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Voltage (VCEO) :
- 45V
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Contact Plating :
- Tin
- Current :
- 5A
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 100MHz
- Max Collector Current :
- 500mA
- Time@Peak Reflow Temperature-Max (s) :
- 30
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 100MHz
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Voltage :
- 45V
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 45V
- Max Power Dissipation :
- 250mW
- Pin Count :
- 3
- Max Breakdown Voltage :
- 45V
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Power Dissipation :
- 250mW
- Factory Lead Time :
- 4 Weeks
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 50V
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Base Part Number :
- BC817
- Terminal Position :
- Dual
- Datasheets
- BC817,235

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC817,235 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 500mA volts.
BC817,235 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817,235 Applications
There are a lot of Nexperia USA Inc.
BC817,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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