BC846A
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- Mfr.Part #
- BC846A
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 44,882
- In Stock ：
- 44,882
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- BC846
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Additional Feature :
- High Reliability
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 300MHz
- Number of Terminations :
- 3
- Transition Frequency :
- 300MHz
- Max Breakdown Voltage :
- 65V
- Max Power Dissipation :
- 300mW
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Length :
- 3.05mm
- Published :
- 2011
- Width :
- 1.4mm
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 15 Weeks
- hFE Min :
- 200
- Weight :
- 7.994566mg
- JESD-609 Code :
- e3
- Max Collector Current :
- 100mA
- Collector Base Voltage (VCBO) :
- 80V
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 65V
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Voltage (VCEO) :
- 65V
- Frequency :
- 300MHz
- Power Dissipation :
- 310mW
- Max Junction Temperature (Tj) :
- 150°C
- REACH SVHC :
- No SVHC
- Height :
- 1.1mm
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 200mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 15nA
- Number of Pins :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- BC846A
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC846A-7-F Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 65V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC846A-7-F Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC846A-7-F Applications
There are a lot of Diodes Incorporated
BC846A-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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