BC847CDLP-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Peak Reflow Temperature (Cel) :

260

Base Part Number :

BC847CD

Collector Emitter Voltage (VCEO) :

45V

Radiation Hardening :

No

Operating Temperature :

-65°C~150°C TJ

Length :

1.3mm

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Frequency :

100MHz

Emitter Base Voltage (VEBO) :

6V

Package / Case :

6-XFDFN Exposed Pad

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

1mm

Case Connection :

COLLECTOR

Polarity :

NPN

Gain Bandwidth Product :

100MHz

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

BOTTOM

Transistor Type :

2 NPN (Dual)

Max Collector Current :

100mA

hFE Min :

420

Element Configuration :

Dual

REACH SVHC :

No SVHC

Max Breakdown Voltage :

45V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Max Power Dissipation :

350mW

Height :

350μm

Factory Lead Time :

19 Weeks

Collector Emitter Breakdown Voltage :

45V

Pbfree Code :

yes

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

JESD-609 Code :

e4

Power Dissipation :

350mW

Collector Base Voltage (VCBO) :

50V

Packaging :

Tape and Reel (TR)

Published :

2012

Collector Emitter Saturation Voltage :

900mV

Transition Frequency :

100MHz

Contact Plating :

Gold

Current - Collector Cutoff (Max) :

15nA

Number of Pins :

6

ECCN Code :

EAR99

Pin Count :

6

Number of Elements :

2

Lead Free :

Lead Free