BCV46TA
- Mfr.Part #
- BCV46TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 60V 0.5A SOT23-3
- Stock
- 41,027
- In Stock :
- 41,027
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2012
- Collector Emitter Breakdown Voltage :
- 60V
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 60V
- Height :
- 1.1mm
- Voltage - Rated DC :
- -60V
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 60V
- Polarity :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- Weight :
- 7.994566mg
- Power - Max :
- 330mW
- Base Part Number :
- BCV46
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 200MHz
- Factory Lead Time :
- 15 Weeks
- Transistor Type :
- PNP - Darlington
- Max Power Dissipation :
- 330mW
- Number of Pins :
- 3
- Frequency - Transition :
- 200MHz
- ECCN Code :
- EAR99
- Max Collector Current :
- 500mA
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Packaging :
- Cut Tape (CT)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Saturation Voltage :
- 1V
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 10V
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Length :
- 3mm
- Transistor Element Material :
- SILICON
- Current Rating :
- -500mA
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Collector Base Voltage (VCBO) :
- 80V
- Continuous Collector Current :
- -500mA
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Width :
- 1.4mm
- Datasheets
- BCV46TA

PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BCV46TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10000 @ 100mA 5V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 100μA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -500mA for high efficiency.Emitter base voltages of 10V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.In the part, the transition frequency is 200MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
BCV46TA Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 200MHz
BCV46TA Applications
There are a lot of Diodes Incorporated
BCV46TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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