BCV47E6327HTSA1
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- Mfr.Part #
- BCV47E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 0.5A SOT23
- Stock
- 27,802
- In Stock ：
- 27,802
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Published :
- 2011
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- 1V
- Polarity :
- NPN
- Emitter Base Voltage (VEBO) :
- 10V
- Width :
- 1.3mm
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- Max Junction Temperature (Tj) :
- 150°C
- ECCN Code :
- EAR99
- Base Part Number :
- BCV47
- Transition Frequency :
- 170MHz
- Max Collector Current :
- 500mA
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Halogen Free :
- Not Halogen Free
- Power Dissipation :
- 360mW
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 60V
- hFE Min :
- 10000
- Element Configuration :
- Single
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 60V
- Height :
- 1.1mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 26 Weeks
- Voltage - Rated DC :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Transistor Type :
- NPN - Darlington
- Length :
- 2.9mm
- Collector Base Voltage (VCBO) :
- 80V
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Current Rating :
- 500mA
- Max Power Dissipation :
- 360mW
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 60V
- Frequency - Transition :
- 170MHz
- Datasheets
- BCV47E6327HTSA1
NPN - Darlington 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCV47E6327HTSA1 Overview
This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.A VCE saturation (Max) of 1V @ 100μA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 170MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 500mA volts is possible.
BCV47E6327HTSA1 Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 170MHz
BCV47E6327HTSA1 Applications
There are a lot of Infineon Technologies
BCV47E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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