BCW66HTC
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- Mfr.Part #
- BCW66HTC
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A SOT23-3
- Stock
- 9,544
- In Stock ：
- 9,544
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Transition Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 330mW
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 45V
- Collector Base Voltage (VCBO) :
- 75V
- Continuous Collector Current :
- 800mA
- Turn Off Time-Max (toff) :
- 400ns
- Published :
- 2012
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- ECCN Code :
- EAR99
- Current Rating :
- 800mA
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Base Part Number :
- BCW66
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Gain Bandwidth Product :
- 100MHz
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Voltage - Rated DC :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- MATTE TIN
- Turn On Time-Max (ton) :
- 100ns
- Collector Emitter Voltage (VCEO) :
- 700mV
- Current - Collector Cutoff (Max) :
- 20nA
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 800mA
- HTS Code :
- 8541.21.00.95
- Reach Compliance Code :
- Unknown
- REACH SVHC :
- No SVHC
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- RoHS Status :
- RoHS Compliant
- Datasheets
- BCW66HTC
NPN -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW66HTC Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 100mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 800mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 800mA.A transition frequency of 100MHz is present in the part.Collector current can be as low as 800mA volts at its maximum.
BCW66HTC Features
the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BCW66HTC Applications
There are a lot of Diodes Incorporated
BCW66HTC applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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