BCW70,235
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- Mfr.Part #
- BCW70,235
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANSISTOR PNP 45V 100MA SOT23
- Stock
- 34,983
- In Stock ：
- 34,983
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Power Dissipation :
- 250mW
- Emitter Base Voltage (VEBO) :
- 5V
- Pin Count :
- 3
- Base Part Number :
- BCW70
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 215 @ 2mA 5V
- Number of Terminations :
- 3
- Terminal Form :
- Gull wing
- Max Collector Current :
- 100mA
- Transition Frequency :
- 100MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Breakdown Voltage :
- 45V
- Published :
- 2009
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 100MHz
- Transistor Element Material :
- SILICON
- Series :
- Automotive, AEC-Q101
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 2.5mA, 50mA
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 50V
- Collector Emitter Voltage (VCEO) :
- 45V
- Mount :
- Surface Mount
- Contact Plating :
- Tin
- Factory Lead Time :
- 4 Weeks
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 45V
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 250mW
- hFE Min :
- 215
- Number of Elements :
- 1
- Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Datasheets
- BCW70,235
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW70,235 Overview
This device has a DC current gain of 215 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 150mV @ 2.5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 100mA volts is possible.
BCW70,235 Features
the DC current gain for this device is 215 @ 2mA 5V
the vce saturation(Max) is 150mV @ 2.5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BCW70,235 Applications
There are a lot of Nexperia USA Inc.
BCW70,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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