BCW72,235
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- Mfr.Part #
- BCW72,235
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NEXPERIA BCW72 - SMALL SIGNAL BI
- Stock
- 9,965
- In Stock ：
- 9,965
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Base Part Number :
- BCW72
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2009
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 100MHz
- Transistor Type :
- NPN
- Mounting Type :
- Surface Mount
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 2.5mA, 50mA
- Frequency :
- 100MHz
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- Factory Lead Time :
- 4 Weeks
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 250mW
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 50V
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Transistor Application :
- SWITCHING
- Series :
- Automotive, AEC-Q101
- Power Dissipation :
- 250mW
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 100MHz
- Datasheets
- BCW72,235
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW72,235 Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 210mV @ 2.5mA, 50mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.100MHz is present in the transition frequency.Maximum collector currents can be below 100mA volts.
BCW72,235 Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 210mV @ 2.5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BCW72,235 Applications
There are a lot of Nexperia USA Inc.
BCW72,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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