BD135TG
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- Mfr.Part #
- BD135TG
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 1.5A TO126
- Stock
- 339
- In Stock ：
- 339
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Collector Emitter Voltage (VCEO) :
- 45V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Lifecycle Status :
- ACTIVE (Last Updated: 19 hours ago)
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Number of Elements :
- 1
- Factory Lead Time :
- 2 Weeks
- Continuous Collector Current :
- 1.5A
- Collector Emitter Breakdown Voltage :
- 45V
- Power Dissipation :
- 1.25W
- Max Power Dissipation :
- 1.25W
- Transistor Type :
- NPN
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tube
- hFE Min :
- 25
- Published :
- 2013
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 500mV
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 45V
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 1.5A
- Package / Case :
- TO-225AA, TO-126-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Datasheets
- BD135TG
NPN -55°C~150°C TJ 100nA ICBO 1 Elements NPN TO-225AA, TO-126-3 Tube Through Hole
BD135TG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 1.5A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
BD135TG Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
BD135TG Applications
There are a lot of ON Semiconductor
BD135TG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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