BD13610STU
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- Mfr.Part #
- BD13610STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 1.5A TO126-3
- Stock
- 10,113
- In Stock ：
- 10,113
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 400V
- Voltage - Rated DC :
- -45V
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Base Part Number :
- BD136
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Length :
- 8mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 1.25W
- Published :
- 2000
- Mount :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tube
- Emitter Base Voltage (VEBO) :
- -5V
- Operating Temperature :
- 150°C TJ
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Transition Frequency :
- 75MHz
- Width :
- 3.25mm
- Package / Case :
- TO-225AA, TO-126-3
- JESD-609 Code :
- e3
- Power Dissipation :
- 1.25W
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- -45V
- Max Collector Current :
- 1.5A
- Qualification Status :
- Not Qualified
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 45V
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 6 Weeks
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 45V
- Pbfree Code :
- yes
- Current Rating :
- -1.5A
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Collector Emitter Saturation Voltage :
- -500mV
- Weight :
- 761mg
- Height :
- 11mm
- Number of Elements :
- 1
- hFE Min :
- 40
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Datasheets
- BD13610STU
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
BD13610STU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 63 @ 150mA 2V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -1.5A.In the part, the transition frequency is 75MHz.This device can take an input voltage of 400V volts before it breaks down.A maximum collector current of 1.5A volts can be achieved.
BD13610STU Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1.5A
a transition frequency of 75MHz
BD13610STU Applications
There are a lot of ON Semiconductor
BD13610STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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