BD140-16

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Saturation Voltage :

-500mV

REACH SVHC :

No SVHC

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

80V

Power Dissipation :

1.25W

Transition Frequency :

75MHz

hFE Min :

25

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-225AA, TO-126-3

Manufacturer Package Identifier :

SOT-32-0016114E

Transistor Type :

PNP

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 2V 150MA

Current - Collector (Ic) (Max) :

1.5A

Polarity/Channel Type :

PNP

Mount :

Through Hole

Base Part Number :

BD140

Length :

7.8mm

Collector Base Voltage (VCBO) :

-80V

Operating Temperature :

150°C TJ

Max Junction Temperature (Tj) :

150°C

Radiation Hardening :

No

JESD-609 Code :

e3

Height :

13.2mm

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Transistor Application :

AMPLIFIER

Element Configuration :

Single

Number of Elements :

1

Mounting Type :

Through Hole

Max Collector Current :

-3A

Transistor Element Material :

SILICON

Max Power Dissipation :

1.25W

Packaging :

Tube

Lifecycle Status :

ACTIVE (Last Updated: 6 months ago)

Emitter Base Voltage (VEBO) :

-5V

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Emitter Voltage (VCEO) :

-80V

Width :

2.7mm

Contact Plating :

Tin

Max Breakdown Voltage :

80V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Factory Lead Time :

8 Weeks