BD140G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Published :

2001

Pbfree Code :

yes

Width :

6.35mm

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Base Part Number :

BD140

Max Power Dissipation :

1.25W

Contact Plating :

Tin

Collector Emitter Voltage (VCEO) :

80V

REACH SVHC :

No SVHC

Number of Terminations :

3

Transistor Element Material :

SILICON

Package / Case :

TO-225AA, TO-126-3

Max Collector Current :

1.5A

Current - Collector Cutoff (Max) :

100nA ICBO

Polarity/Channel Type :

PNP

Transistor Type :

PNP

Operating Temperature :

-55°C~150°C TJ

Height :

6.35mm

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Voltage - Rated DC :

-80V

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Saturation Voltage :

500mV

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Through Hole

Factory Lead Time :

2 Weeks

Transistor Application :

AMPLIFIER

Collector Emitter Breakdown Voltage :

80V

JESD-609 Code :

e3

Pin Count :

3

Weight :

4.535924g

Length :

6.35mm

Power Dissipation :

1.25W

hFE Min :

25

Number of Pins :

3

Surface Mount :

No

Element Configuration :

Single

Radiation Hardening :

No

Current Rating :

1.5A

Lead Free :

Lead Free

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

100V

Emitter Base Voltage (VEBO) :

5V