BD180G
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- Mfr.Part #
- BD180G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A TO126
- Stock
- 27,082
- In Stock ：
- 27,082
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Height :
- 11.04mm
- Transistor Type :
- PNP
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 100mA, 1A
- hFE Min :
- 15
- Collector Base Voltage (VCBO) :
- 80V
- Max Collector Current :
- 1A
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 30W
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- BD180
- Collector Emitter Breakdown Voltage :
- 80V
- Collector Emitter Saturation Voltage :
- 800mV
- Transistor Application :
- AMPLIFIER
- Operating Temperature :
- -65°C~150°C TJ
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Width :
- 2.66mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Frequency :
- 3MHz
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Transition Frequency :
- 3MHz
- Packaging :
- Bulk
- Published :
- 2006
- Current Rating :
- -3A
- Factory Lead Time :
- 2 Weeks
- Power Dissipation :
- 30W
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-225AA, TO-126-3
- Collector Emitter Voltage (VCEO) :
- 80V
- Surface Mount :
- No
- Length :
- 7.74mm
- Voltage - Rated DC :
- -80V
- Gain Bandwidth Product :
- 3MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Number of Pins :
- 3
- Pin Count :
- 3
- Element Configuration :
- Single
- Datasheets
- BD180G
PNP -65°C~150°C TJ 1mA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
BD180G Overview
In this device, the DC current gain is 40 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BD180G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
BD180G Applications
There are a lot of ON Semiconductor
BD180G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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