BD237
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- Mfr.Part #
- BD237
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 2A SOT32-3
- Stock
- 3,482
- In Stock ：
- 3,482
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 25W
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 2A
- Gain Bandwidth Product :
- 3MHz
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 2V
- Case Connection :
- Isolated
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 80V
- Voltage - Rated DC :
- 100V
- Transition Frequency :
- 3MHz
- Element Configuration :
- Single
- Height :
- 10.8mm
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 8 Weeks
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 80V
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Frequency :
- 3MHz
- Package / Case :
- TO-225AA, TO-126-3
- Base Part Number :
- BD237
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- hFE Min :
- 40
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Collector Emitter Saturation Voltage :
- 600mV
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Length :
- 7.8mm
- VCEsat-Max :
- 0.6 V
- Max Collector Current :
- 2A
- Max Power Dissipation :
- 25W
- Contact Plating :
- Tin
- Width :
- 2.7mm
- Datasheets
- BD237
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD237 Overview
In this device, the DC current gain is 25 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
BD237 Features
the DC current gain for this device is 25 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 3MHz
BD237 Applications
There are a lot of STMicroelectronics
BD237 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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