BD239C
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- Mfr.Part #
- BD239C
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 2A TO220
- Stock
- 7,205
- In Stock ：
- 7,205
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Collector Base Voltage (VCBO) :
- 115V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 200mA, 1A
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- hFE Min :
- 40
- Weight :
- 4.535924g
- Base Part Number :
- BD239
- Max Collector Current :
- 2A
- Mount :
- Through Hole
- Max Power Dissipation :
- 2W
- Current - Collector Cutoff (Max) :
- 300μA
- Number of Pins :
- 3
- Height :
- 9.15mm
- Collector Emitter Voltage (VCEO) :
- 100V
- VCEsat-Max :
- 0.7 V
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- 700mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Width :
- 4.6mm
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Transistor Type :
- NPN
- Package / Case :
- TO-220-3
- Length :
- 10.4mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 1A 4V
- Power Dissipation :
- 2W
- JEDEC-95 Code :
- TO-220AB
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 100V
- Factory Lead Time :
- 8 Weeks
- ECCN Code :
- EAR99
- Datasheets
- BD239C
NPN 150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD239C Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 1A 4V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.A maximum collector current of 2A volts can be achieved.
BD239C Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at 5V
BD239C Applications
There are a lot of STMicroelectronics
BD239C applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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