BD239C
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- Mfr.Part #
- BD239C
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 2A TO220
- Stock
- 7,205
- In Stock ：
- 7,205
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Number of Elements :
- 1
- Package / Case :
- TO-220-3
- Collector Emitter Voltage (VCEO) :
- 100V
- Base Part Number :
- BD239
- Current - Collector Cutoff (Max) :
- 300μA
- JEDEC-95 Code :
- TO-220AB
- JESD-609 Code :
- e3
- Max Collector Current :
- 2A
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Weight :
- 4.535924g
- hFE Min :
- 40
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Width :
- 4.6mm
- Max Power Dissipation :
- 2W
- Power Dissipation :
- 2W
- Emitter Base Voltage (VEBO) :
- 5V
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Height :
- 9.15mm
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- VCEsat-Max :
- 0.7 V
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 1A 4V
- Factory Lead Time :
- 8 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 200mA, 1A
- Length :
- 10.4mm
- Collector Emitter Saturation Voltage :
- 700mV
- Collector Base Voltage (VCBO) :
- 115V
- Datasheets
- BD239C
NPN 150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD239C Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 1A 4V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.A maximum collector current of 2A volts can be achieved.
BD239C Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at 5V
BD239C Applications
There are a lot of STMicroelectronics
BD239C applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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