BD241C
- Mfr.Part #
- BD241C
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A TO220
- Stock
- 7,562
- In Stock :
- 7,562
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 1.2V
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 300μA
- Number of Pins :
- 3
- Element Configuration :
- Single
- Mount :
- Through Hole
- Height :
- 9.15mm
- ECCN Code :
- EAR99
- Transition Frequency :
- 3MHz
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 600mA, 3A
- Collector Emitter Voltage (VCEO) :
- 100V
- Max Collector Current :
- 3A
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 8 Weeks
- Power Dissipation :
- 40W
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 100V
- Length :
- 10.4mm
- RoHS Status :
- ROHS3 Compliant
- Width :
- 4.6mm
- JEDEC-95 Code :
- TO-220AB
- Packaging :
- Tube
- Package / Case :
- TO-220-3
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Base Part Number :
- BD241
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 25
- Emitter Base Voltage (VEBO) :
- 5V
- Contact Plating :
- Tin
- Max Power Dissipation :
- 40W
- REACH SVHC :
- No SVHC
- Datasheets
- BD241C

NPN 150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD241C Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 3A 4V DC current gain.As it features a collector emitter saturation voltage of 1.2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 3A volts.
BD241C Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
BD241C Applications
There are a lot of STMicroelectronics
BD241C applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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