BD241CG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

40W

Mounting Type :

Through Hole

Surface Mount :

No

Package / Case :

TO-220-3

Factory Lead Time :

2 Weeks

JEDEC-95 Code :

TO-220AB

Max Collector Current :

3A

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 1A 4V

Collector Emitter Voltage (VCEO) :

100V

Number of Terminations :

3

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

300μA

Pin Count :

3

Emitter Base Voltage (VEBO) :

5V

Gain Bandwidth Product :

3MHz

Published :

2010

Polarity/Channel Type :

NPN

Current Rating :

3A

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Collector Emitter Breakdown Voltage :

100V

hFE Min :

25

Element Configuration :

Single

JESD-609 Code :

e3

Power Dissipation :

40mW

Frequency :

3MHz

Transistor Type :

NPN

Contact Plating :

Tin

Collector Emitter Saturation Voltage :

1.2V

Lead Free :

Lead Free

Voltage - Rated DC :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

90V

Transistor Application :

SWITCHING

Pbfree Code :

yes

Packaging :

Tube

Base Part Number :

BD241

Transistor Element Material :

SILICON

Transition Frequency :

3MHz

Case Connection :

COLLECTOR

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Operating Temperature :

-65°C~150°C TJ

ECCN Code :

EAR99

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 600mA, 3A

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40