BD241CTU
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- Mfr.Part #
- BD241CTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A TO220-3
- Stock
- 175
- In Stock ：
- 175
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-220AB
- Voltage - Rated DC :
- 100V
- Max Power Dissipation :
- 40W
- Height :
- 14.2mm
- Collector Emitter Voltage (VCEO) :
- 100V
- Radiation Hardening :
- No
- Weight :
- 1.8g
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Length :
- 9.2mm
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Breakdown Voltage :
- 100V
- Power Dissipation :
- 40W
- Published :
- 2000
- Current - Collector Cutoff (Max) :
- 300μA
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 600mA, 3A
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tube
- Base Part Number :
- BD241
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Element Configuration :
- Single
- hFE Min :
- 10
- Lead Free :
- Lead Free
- Factory Lead Time :
- 6 Weeks
- Width :
- 4.5mm
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 3A
- Max Collector Current :
- 3A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 4V
- Package / Case :
- TO-220-3
- Mount :
- Through Hole
- Collector Emitter Saturation Voltage :
- 1.2V
- Lifecycle Status :
- LIFETIME (Last Updated: 1 week ago)
- Contact Plating :
- Tin
- Transition Frequency :
- 3MHz
- Datasheets
- BD241CTU
NPN 150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD241CTU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 25 @ 1A 4V DC current gain.As it features a collector emitter saturation voltage of 1.2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 3A volts.
BD241CTU Features
the DC current gain for this device is 25 @ 1A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
BD241CTU Applications
There are a lot of ON Semiconductor
BD241CTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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