BD242BG
- Mfr.Part #
- BD242BG
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 3A TO220
- Stock
- 39,411
- In Stock :
- 39,411
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 40W
- Number of Elements :
- 1
- Power - Max :
- 40W
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 115V
- Transition Frequency :
- 3MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 3MHz
- Voltage - Rated DC :
- -80V
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Frequency :
- 3MHz
- Current - Collector Cutoff (Max) :
- 300μA
- hFE Min :
- 25
- Max Collector Current :
- 3A
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- PNP
- Power Dissipation :
- 40mW
- Package / Case :
- TO-220-3
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-220AB
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- Published :
- 2001
- Factory Lead Time :
- 2 Weeks
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 4V
- Packaging :
- Tube
- Collector Emitter Saturation Voltage :
- 1.2V
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 600mA, 3A
- Collector Emitter Voltage (VCEO) :
- 80V
- Current Rating :
- -3A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Base Part Number :
- BD242
- Operating Temperature :
- -65°C~150°C TJ
- JESD-609 Code :
- e3
- Surface Mount :
- No
- Datasheets
- BD242BG

PNP -65°C~150°C TJ 300μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
BD242BG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 1A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 600mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.During maximum operation, collector current can be as low as 3A volts.
BD242BG Features
the DC current gain for this device is 25 @ 1A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
BD242BG Applications
There are a lot of ON Semiconductor
BD242BG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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