BD242C
- Mfr.Part #
- BD242C
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A TO220
- Stock
- 32,745
- In Stock :
- 32,745
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 100V
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 6 Weeks
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 1.2V
- hFE Min :
- 25
- Transistor Application :
- SWITCHING
- Current Rating :
- -3A
- Radiation Hardening :
- No
- Base Part Number :
- BD242
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- PNP
- Published :
- 2004
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Current - Collector Cutoff (Max) :
- 300μA
- Power Dissipation :
- 40mW
- Collector Base Voltage (VCBO) :
- 115V
- Number of Pins :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- Frequency :
- 3MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 4V
- Power - Max :
- 40W
- Max Power Dissipation :
- 40W
- Voltage - Rated DC :
- -100V
- Pin Count :
- 3
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e3
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 3MHz
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Transition Frequency :
- 3MHz
- Package / Case :
- TO-220-3
- Lead Free :
- Lead Free
- Surface Mount :
- No
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 600mA, 3A
- JEDEC-95 Code :
- TO-220AB
- Packaging :
- Tube
- Pbfree Code :
- yes
- Max Collector Current :
- 3A
- Case Connection :
- COLLECTOR
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 100V
- Datasheets
- BD242C

PNP -65°C~150°C TJ 300μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
BD242CG Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 25 @ 1A 4V DC current gain.As it features a collector emitter saturation voltage of 1.2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 3A volts.
BD242CG Features
the DC current gain for this device is 25 @ 1A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
BD242CG Applications
There are a lot of ON Semiconductor
BD242CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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