BD435STU
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- Mfr.Part #
- BD435STU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 4A TO126-3
- Stock
- 4,640
- In Stock ：
- 4,640
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Factory Lead Time :
- 12 Weeks
- Weight :
- 760.986249mg
- Collector Emitter Saturation Voltage :
- 200mV
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Transition Frequency :
- 3MHz
- Lifecycle Status :
- LIFETIME (Last Updated: 1 week ago)
- Transistor Type :
- NPN
- Current Rating :
- 4A
- Voltage :
- 32V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Frequency :
- 3MHz
- Gain Bandwidth Product :
- 3MHz
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 32V
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100μA
- Voltage - Rated DC :
- 32V
- Lead Free :
- Lead Free
- Power Dissipation :
- 36W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 10mA 5V
- hFE Min :
- 40
- Pbfree Code :
- yes
- Base Part Number :
- BD435
- Operating Temperature :
- 150°C TJ
- Published :
- 2017
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 4A
- Collector Emitter Breakdown Voltage :
- 32V
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 36W
- Current :
- 4A
- Package / Case :
- TO-225AA, TO-126-3
- Collector Emitter Voltage (VCEO) :
- 32V
- Datasheets
- BD435STU
NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD435STU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 10mA 5V.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.A transition frequency of 3MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
BD435STU Features
the DC current gain for this device is 40 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz
BD435STU Applications
There are a lot of ON Semiconductor
BD435STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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