BD437G
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- Mfr.Part #
- BD437G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 4A TO126
- Stock
- 50,385
- In Stock ：
- 50,385
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Packaging :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 300mA, 3A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- 800mV
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 45V
- Base Part Number :
- BD437
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Current Rating :
- 4A
- Frequency :
- 3MHz
- Transition Frequency :
- 3MHz
- Factory Lead Time :
- 2 Weeks
- Surface Mount :
- No
- Published :
- 2003
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Voltage - Rated DC :
- 45V
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- hFE Min :
- 30
- Max Collector Current :
- 4A
- Gain Bandwidth Product :
- 3MHz
- Max Power Dissipation :
- 36W
- Pin Count :
- 3
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 45V
- Power Dissipation :
- 36W
- Package / Case :
- TO-225AA, TO-126-3
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Datasheets
- BD437G
NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD437G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 85 @ 500mA 1V.With a collector emitter saturation voltage of 800mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 800mV @ 300mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.A transition frequency of 3MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
BD437G Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz
BD437G Applications
There are a lot of ON Semiconductor
BD437G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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