BD438
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- Mfr.Part #
- BD438
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 4A TO126
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 10mA 5V
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Package / Case :
- TO-225AA, TO-126-3
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 36W
- Transition Frequency :
- 3MHz
- Base Part Number :
- BD438
- hFE Min :
- 30
- Collector Emitter Saturation Voltage :
- 200mV
- Current - Collector Cutoff (Max) :
- 100μA
- Height :
- 10.8mm
- Number of Elements :
- 1
- VCEsat-Max :
- 0.6 V
- Factory Lead Time :
- 8 Weeks
- Collector Base Voltage (VCBO) :
- 45V
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 45V
- Max Power Dissipation :
- 36W
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 200mA, 2A
- Max Collector Current :
- 4A
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Frequency :
- 3MHz
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- Isolated
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Gain Bandwidth Product :
- 3MHz
- Length :
- 7.8mm
- Transistor Application :
- SWITCHING
- Width :
- 2.7mm
- Packaging :
- Tube
- Polarity/Channel Type :
- PNP
- Max Breakdown Voltage :
- 45V
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Datasheets
- BD438
PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
BD438 Overview
In this device, the DC current gain is 30 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 200mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 200mA, 2A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.3MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 4A volts.
BD438 Features
the DC current gain for this device is 30 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
BD438 Applications
There are a lot of STMicroelectronics
BD438 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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