BD438
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- Mfr.Part #
- BD438
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 4A SOT32-3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 36W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 10mA 5V
- Gain Bandwidth Product :
- 3MHz
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 36W
- Polarity/Channel Type :
- PNP
- Collector Base Voltage (VCBO) :
- 45V
- Package / Case :
- TO-225AA, TO-126-3
- JESD-609 Code :
- e3
- Factory Lead Time :
- 8 Weeks
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 200mV
- hFE Min :
- 30
- Height :
- 10.8mm
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 3MHz
- Base Part Number :
- BD438
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 45V
- Max Breakdown Voltage :
- 45V
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 200mA, 2A
- Packaging :
- Tube
- Width :
- 2.7mm
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 45V
- Mount :
- Through Hole
- Case Connection :
- Isolated
- Current - Collector Cutoff (Max) :
- 100μA
- Max Collector Current :
- 4A
- Transistor Element Material :
- SILICON
- Length :
- 7.8mm
- Contact Plating :
- Tin
- VCEsat-Max :
- 0.6 V
- Transistor Type :
- PNP
- Number of Elements :
- 1
- Frequency :
- 3MHz
- Pin Count :
- 3
- Datasheets
- BD438
PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
BD438 Overview
In this device, the DC current gain is 30 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 200mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 200mA, 2A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.3MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 4A volts.
BD438 Features
the DC current gain for this device is 30 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
BD438 Applications
There are a lot of STMicroelectronics
BD438 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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