BD442S

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Polarity/Channel Type :

PNP

Gain Bandwidth Product :

3MHz

Number of Terminations :

3

Power Dissipation :

36W

Weight :

761mg

ECCN Code :

EAR99

Mounting Type :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 500mA 1V

Current - Collector Cutoff (Max) :

100μA

Package / Case :

TO-225AA, TO-126-3

RoHS Status :

RoHS Compliant

Number of Elements :

1

Qualification Status :

Not Qualified

Collector Base Voltage (VCBO) :

-80V

Voltage - Rated DC :

-80V

Max Power Dissipation :

36W

Current Rating :

-4A

Transistor Element Material :

SILICON

Frequency :

3MHz

Element Configuration :

Single

Transistor Type :

PNP

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

3

Packaging :

Bulk

Vce Saturation (Max) @ Ib, Ic :

800mV @ 200mA, 2A

Collector Emitter Voltage (VCEO) :

80V

Collector Emitter Breakdown Voltage :

80V

Mount :

Through Hole

Transistor Application :

SWITCHING

Lead Free :

Lead Free

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Base Part Number :

BD442

hFE Min :

15

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

-5V

Collector Emitter Saturation Voltage :

-800mV

Transition Frequency :

3MHz

Operating Temperature :

150°C TJ

Max Collector Current :

4A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED