BD676G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Factory Lead Time :

2 Weeks

Collector Emitter Voltage (VCEO) :

45V

Surface Mount :

No

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Polarity :

PNP

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Packaging :

Bulk

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

500μA

Number of Terminations :

3

hFE Min :

750

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Radiation Hardening :

No

Lead Free :

Lead Free

Number of Elements :

1

Voltage - Rated DC :

-45V

Width :

2.66mm

Length :

7.74mm

Height :

11.04mm

Mounting Type :

Through Hole

Transistor Application :

AMPLIFIER

Collector Emitter Breakdown Voltage :

45V

Current Rating :

-4A

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 1.5A 3V

Halogen Free :

Halogen Free

Emitter Base Voltage (VEBO) :

5V

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

40W

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Published :

2005

Element Configuration :

Single

Base Part Number :

BD676

ECCN Code :

EAR99

Power Dissipation :

40W

Max Collector Current :

4A

Package / Case :

TO-225AA, TO-126-3

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 30mA, 1.5A

Transistor Type :

PNP - Darlington

Collector Base Voltage (VCBO) :

45V

Contact Plating :

Tin

Transition Frequency :

200MHz