BD677
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- Mfr.Part #
- BD677
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 4A TO126
- Stock
- 4,227
- In Stock ：
- 4,227
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 500μA
- ECCN Code :
- EAR99
- Base Part Number :
- BD677
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Case Connection :
- Isolated
- Length :
- 7.8mm
- Max Power Dissipation :
- 40W
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Power Dissipation :
- 40W
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 60V
- Current Rating :
- 4A
- Polarity :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Collector Emitter Saturation Voltage :
- 2.5V
- Lead Free :
- Lead Free
- Max Collector Current :
- 4A
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 60V
- Voltage - Rated DC :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Factory Lead Time :
- 8 Weeks
- Transistor Type :
- NPN - Darlington
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 10MHz
- Number of Elements :
- 1
- Height :
- 10.8mm
- Width :
- 2.7mm
- hFE Min :
- 750
- Package / Case :
- TO-225AA, TO-126-3
- Datasheets
- BD677
NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
BD677 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 1.5A 3V.With a collector emitter saturation voltage of 2.5V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 30mA, 1.5A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.A transition frequency of 10MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
BD677 Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz
BD677 Applications
There are a lot of STMicroelectronics
BD677 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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