BD679
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- Mfr.Part #
- BD679
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 4A SOT32-3
- Stock
- 39,040
- In Stock ：
- 39,040
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 2.5V
- Length :
- 7.8mm
- Package / Case :
- TO-225AA, TO-126-3
- Current Rating :
- 4A
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 500μA
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Case Connection :
- Isolated
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Radiation Hardening :
- No
- Transistor Type :
- NPN - Darlington
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 750
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 8 Weeks
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 80V
- Pin Count :
- 3
- Mount :
- Through Hole
- Max Power Dissipation :
- 40W
- Collector Base Voltage (VCBO) :
- 80V
- Transition Frequency :
- 10MHz
- Max Collector Current :
- 4A
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 80V
- Power Dissipation :
- 40W
- Collector Emitter Breakdown Voltage :
- 80V
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Polarity :
- NPN
- Base Part Number :
- BD679
- Width :
- 2.9mm
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Height :
- 11.05mm
- Packaging :
- Tube
- Datasheets
- BD679
NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
The BD679 is an NPN darlington transistor that comes in two packages: TO-225 and TO-126. A darlington transistor is made up of two BJT transistors in a single package that are coupled in such a way that the output gain is extremely high.
The transistor's maximum gain, or Hfe, is 1000, making it suited for high gain applications. The collector current maximum is 4A, with a peak collector current of 6A.
The transistor's collector-emitter voltage, or maximum load voltage, is 80V, and its collector dissipation is 40Watt. The BD679 can be utilized in a wide range of switching and amplification applications.
BD679 Features
Transistor Type: NPN
Max Collector Current(IC): 4A
Package Type: TO-225, TO-126
Pb-Free Packages are Available
Max Peak Collector Current: 6A
Max Emitter-Base Voltage (VEBO): 5V
Max Collector Dissipation (Pc): 40 Watt
Max Collector-Base Voltage (VCB): 80V
Max Collector-Emitter Voltage (VCE): 80V
Minimum & Maximum DC Current Gain (hFE): 1000
Max Storage & Operating temperature: -65 to +150 Centigrade
BD679 Applications
BMS Circuits
Motor Driver Circuits
Switching Application
Medium Power Linear
Battery Charger Circuits
Audio Amplifier Circuits
General–Purpose Amplifier
Audio Preamplifiers and Its Stages
Driving or Switching Loads under 4A
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