BD679AS
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- Mfr.Part #
- BD679AS
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 4A TO126-3
- Stock
- 5,621
- In Stock ：
- 5,621
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 2 Weeks
- Weight :
- 760.986249mg
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Current Rating :
- 4A
- Voltage :
- 80V
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 2.8V
- Current - Collector Cutoff (Max) :
- 500μA
- Transition Frequency :
- 10MHz
- Continuous Collector Current :
- 4A
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Max Collector Current :
- 4A
- Max Power Dissipation :
- 40W
- Number of Terminations :
- 3
- Package / Case :
- TO-225AA, TO-126-3
- hFE Min :
- 750
- Collector Emitter Voltage (VCEO) :
- 80V
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 80V
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 2.8V @ 40mA, 2A
- Transistor Type :
- NPN - Darlington
- Packaging :
- Bulk
- Current :
- 2A
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2000
- Number of Pins :
- 3
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Polarity :
- NPN
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 80V
- Power Dissipation :
- 40W
- Base Part Number :
- BD679
- Voltage - Rated DC :
- 80V
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Datasheets
- BD679AS
NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
BD679AS Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 2A 3V.With a collector emitter saturation voltage of 2.8V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.8V @ 40mA, 2A.In order to achieve high efficiency, the continuous collector voltage should be kept at 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.A transition frequency of 10MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
BD679AS Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz
BD679AS Applications
There are a lot of ON Semiconductor
BD679AS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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