BD810G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Case Connection :

COLLECTOR

hFE Min :

30

Current Rating :

10A

Collector Emitter Breakdown Voltage :

80V

Vce Saturation (Max) @ Ib, Ic :

1.1V @ 300mA, 3A

Collector Emitter Voltage (VCEO) :

80V

Element Configuration :

Single

Contact Plating :

Tin

Gain Bandwidth Product :

1.5MHz

Surface Mount :

No

Packaging :

Tube

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Voltage - Rated DC :

-80V

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Number of Terminations :

3

Collector Emitter Saturation Voltage :

1.1V

JEDEC-95 Code :

TO-220AB

Width :

12.7mm

Current - Collector Cutoff (Max) :

1mA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 4A 2V

Polarity/Channel Type :

PNP

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Factory Lead Time :

2 Weeks

Frequency :

1.5MHz

Transistor Type :

PNP

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Through Hole

Length :

31.75mm

Published :

2001

Number of Pins :

3

Weight :

4.535924g

Max Collector Current :

10A

Collector Base Voltage (VCBO) :

80V

Emitter Base Voltage (VEBO) :

5V

Power Dissipation :

90W

Number of Elements :

1

Max Power Dissipation :

90W

Pin Count :

3

JESD-609 Code :

e3

Height :

6.35mm

Pbfree Code :

yes

Transition Frequency :

1.5MHz

Package / Case :

TO-220-3

Transistor Application :

AMPLIFIER

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No