BD810G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transition Frequency :

1.5MHz

JESD-609 Code :

e3

Surface Mount :

No

Max Collector Current :

10A

Packaging :

Tube

Radiation Hardening :

No

Lead Free :

Lead Free

Pin Count :

3

hFE Min :

30

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 4A 2V

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Gain Bandwidth Product :

1.5MHz

Weight :

4.535924g

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Voltage (VCEO) :

80V

Height :

6.35mm

Polarity/Channel Type :

PNP

Emitter Base Voltage (VEBO) :

5V

Voltage - Rated DC :

-80V

Transistor Application :

AMPLIFIER

Width :

12.7mm

Length :

31.75mm

REACH SVHC :

No SVHC

Vce Saturation (Max) @ Ib, Ic :

1.1V @ 300mA, 3A

Number of Elements :

1

Number of Terminations :

3

Collector Emitter Saturation Voltage :

1.1V

Collector Emitter Breakdown Voltage :

80V

Collector Base Voltage (VCBO) :

80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

90W

Published :

2001

Current Rating :

10A

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

ECCN Code :

EAR99

Contact Plating :

Tin

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Package / Case :

TO-220-3

Transistor Type :

PNP

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

90W

Current - Collector Cutoff (Max) :

1mA ICBO

Number of Pins :

3

Pbfree Code :

yes

Factory Lead Time :

2 Weeks

Frequency :

1.5MHz

Case Connection :

COLLECTOR

RoHS Status :

ROHS3 Compliant