BD810G
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- Mfr.Part #
- BD810G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 10A TO220
- Stock
- 42,959
- In Stock ：
- 42,959
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 31.75mm
- Transistor Application :
- AMPLIFIER
- Published :
- 2001
- Weight :
- 4.535924g
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 80V
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 1.1V @ 300mA, 3A
- Factory Lead Time :
- 2 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 30
- Number of Elements :
- 1
- Power Dissipation :
- 90W
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 80V
- Voltage - Rated DC :
- -80V
- Mounting Type :
- Through Hole
- Current Rating :
- 10A
- Collector Emitter Saturation Voltage :
- 1.1V
- Max Power Dissipation :
- 90W
- Gain Bandwidth Product :
- 1.5MHz
- Collector Emitter Breakdown Voltage :
- 80V
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 1.5MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Width :
- 12.7mm
- Number of Terminations :
- 3
- JEDEC-95 Code :
- TO-220AB
- Height :
- 6.35mm
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Max Collector Current :
- 10A
- REACH SVHC :
- No SVHC
- Frequency :
- 1.5MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 4A 2V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- TO-220-3
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- Datasheets
- BD810G
PNP -55°C~150°C TJ 1mA ICBO 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
BD810G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 4A 2V.The collector emitter saturation voltage is 1.1V, which allows for maximum design flexibility.When VCE saturation is 1.1V @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 10A.In the part, the transition frequency is 1.5MHz.A maximum collector current of 10A volts can be achieved.
BD810G Features
the DC current gain for this device is 15 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 1.5MHz
BD810G Applications
There are a lot of ON Semiconductor
BD810G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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