BD810

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 4A 2V

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Voltage - Rated DC :

-80V

Transition Frequency :

1.5MHz

Frequency :

1.5MHz

Number of Pins :

3

Current Rating :

10A

REACH SVHC :

No SVHC

Collector Emitter Voltage (VCEO) :

80V

Radiation Hardening :

No

Max Collector Current :

10A

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Emitter Base Voltage (VEBO) :

5V

Power Dissipation :

90W

hFE Min :

30

Vce Saturation (Max) @ Ib, Ic :

1.1V @ 300mA, 3A

Collector Emitter Saturation Voltage :

1.1V

Transistor Type :

PNP

Factory Lead Time :

2 Weeks

Mounting Type :

Through Hole

Case Connection :

COLLECTOR

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

90W

Transistor Element Material :

SILICON

Surface Mount :

No

Element Configuration :

Single

Current - Collector Cutoff (Max) :

1mA ICBO

Published :

2001

JEDEC-95 Code :

TO-220AB

Gain Bandwidth Product :

1.5MHz

Width :

12.7mm

Transistor Application :

AMPLIFIER

Packaging :

Tube

Height :

6.35mm

ECCN Code :

EAR99

Package / Case :

TO-220-3

Time@Peak Reflow Temperature-Max (s) :

40

Collector Base Voltage (VCBO) :

80V

Contact Plating :

Tin

Collector Emitter Breakdown Voltage :

80V

JESD-609 Code :

e3

Length :

31.75mm

Weight :

4.535924g

Pbfree Code :

yes

Polarity/Channel Type :

PNP