BDW83B
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- Mfr.Part #
- BDW83B
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-218-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 15A TO218
- Stock
- 20,498
- In Stock ：
- 20,498
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Breakdown Voltage :
- 80V
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- Darlington
- RoHS Status :
- Non-RoHS Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 6A 3V
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Packaging :
- Bulk
- Max Collector Current :
- 15A
- Case Connection :
- COLLECTOR
- Transistor Type :
- NPN
- Package / Case :
- TO-218-3
- JESD-609 Code :
- e0
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSFM-T3
- ECCN Code :
- EAR99
- Transistor Application :
- AMPLIFIER
- HTS Code :
- 8541.29.00.95
- Polarity/Channel Type :
- NPN
- Current - Collector (Ic) (Max) :
- 15A
- Terminal Position :
- Single
- Pbfree Code :
- No
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Operating Temperature (Max) :
- 150°C
- Reach Compliance Code :
- not_compliant
- Max Power Dissipation :
- 130W
- Datasheets
- BDW83B
NPN 1 Elements 3 Terminations SILICON NPN TO-218-3 Bulk Through Hole
BDW83B Overview
In this device, the DC current gain is 750 @ 6A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Maximum collector currents can be below 15A volts.
BDW83B Features
the DC current gain for this device is 750 @ 6A 3V
BDW83B Applications
There are a lot of Central Semiconductor Corp
BDW83B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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