BDW83C

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Mfr.Part #
BDW83C
Manufacturer
Central Semiconductor
Package / Case
TO-247-3
Datasheet
Download
Description
TRANS NPN 100V 15A TO218
Stock
6,117
In Stock :
6,117

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Manufacturer :
Central Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Contact Plating :
Tin
Vce Saturation (Max) @ Ib, Ic :
4V @ 150mA, 15A
ECCN Code :
EAR99
Lead Free :
Lead Free
VCEsat-Max :
4 V
Max Power Dissipation :
130W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity :
NPN
Transistor Type :
NPN - Darlington
Collector Emitter Saturation Voltage :
2.5V
Collector Emitter Voltage (VCEO) :
100V
REACH SVHC :
No SVHC
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 6A 3V
Pin Count :
3
Base Part Number :
BDW83
Length :
15.75mm
Mount :
Through Hole
Height :
20.15mm
Collector Base Voltage (VCBO) :
100V
Element Configuration :
Single
hFE Min :
100
Weight :
90.718474g
Voltage - Rated DC :
100V
Current - Collector Cutoff (Max) :
1mA
Number of Pins :
3
Max Collector Current :
15A
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Radiation Hardening :
No
Operating Temperature :
150°C TJ
Package / Case :
TO-247-3
Transistor Element Material :
SILICON
Power Dissipation :
130W
Number of Elements :
1
Collector Emitter Breakdown Voltage :
100V
Number of Terminations :
3
Emitter Base Voltage (VEBO) :
5V
Width :
5.15mm
JESD-609 Code :
e3
Pbfree Code :
yes
Packaging :
Tube
Mounting Type :
Through Hole
Current Rating :
15A
Datasheets
BDW83C
Introducing Transistors - Bipolar (BJT) - Single Central Semiconductor BDW83C from Xinshop,where excellence meets affordability. This product stands out with its Base Part Number:BDW83, Number of Pins:3, Operating Temperature:150°C TJ, Package / Case:TO-247-3, Number of Terminations:3, Mounting Type:Through Hole, BDW83C pinout, BDW83C datasheet PDF, BDW83C amp .Beyond Transistors - Bipolar (BJT) - Single Central Semiconductor BDW83C ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN - Darlington 150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole

BDW83C Overview


This device has a DC current gain of 750 @ 6A 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 2.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 15A.The maximum collector current is 15A volts.

BDW83C Features


the DC current gain for this device is 750 @ 6A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 150mA, 15A
the emitter base voltage is kept at 5V
the current rating of this device is 15A


BDW83C Applications


There are a lot of STMicroelectronics
BDW83C applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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