BDW93C-S
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- Mfr.Part #
- BDW93C-S
- Manufacturer
- Bourns, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 12A TO220
- Stock
- 7,750
- In Stock ：
- 7,750
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- Manufacturer :
- Bourns, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Pin Count :
- 3
- JESD-609 Code :
- e1
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-220AB
- Max Collector Current :
- 12A
- Power - Max :
- 2W
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 100V
- Transistor Type :
- NPN - Darlington
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 5A 3V
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 1mA
- Polarity :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 100mA, 10A
- Collector Base Voltage (VCBO) :
- 100V
- Base Part Number :
- BDW93
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Package / Case :
- TO-220-3
- Operating Temperature :
- -65°C~150°C TJ
- Number of Elements :
- 1
- Packaging :
- Tube
- Max Power Dissipation :
- 2W
- Published :
- 1993
- Collector Emitter Breakdown Voltage :
- 100V
- Terminal Finish :
- TIN SILVER COPPER
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSFM-T3
- Collector Emitter Saturation Voltage :
- 2V
- Datasheets
- BDW93C-S
NPN - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDW93C-S Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 5A 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 100mA, 10A.The emitter base voltage can be kept at 5V for high efficiency.Single BJT transistor is possible to have a collector current as low as 12A volts at Single BJT transistors maximum.
BDW93C-S Features
the DC current gain for this device is 750 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 5V
BDW93C-S Applications
There are a lot of Bourns Inc.
BDW93C-S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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