BDW93CFP
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- Mfr.Part #
- BDW93CFP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 12A TO220FP
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 9.3mm
- VCEsat-Max :
- 3 V
- Voltage - Rated DC :
- 100V
- Power Dissipation :
- 33W
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- 2V
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 100V
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-220-3 Full Pack
- Current - Collector Cutoff (Max) :
- 1mA
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- JEDEC-95 Code :
- TO-220AB
- Transistor Type :
- NPN - Darlington
- Number of Terminations :
- 3
- hFE Min :
- 100
- Emitter Base Voltage (VEBO) :
- 2.5V
- Max Collector Current :
- 12A
- Transistor Application :
- SWITCHING
- Base Part Number :
- BDW93
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Length :
- 10.4mm
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 100mA, 10A
- Pin Count :
- 3
- Mount :
- Surface Mount, Through Hole
- Weight :
- 2.299997g
- Max Breakdown Voltage :
- 350V
- Packaging :
- Tube
- Max Power Dissipation :
- 33W
- ECCN Code :
- EAR99
- Width :
- 4.6mm
- Current Rating :
- 12A
- Collector Emitter Voltage (VCEO) :
- 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 5A 3V
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity :
- NPN
- Collector Emitter Breakdown Voltage :
- 100V
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- Isolated
- Datasheets
- BDW93CFP
NPN - Darlington 150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-220-3 Full Pack Tube Through Hole
BDW93CFP Overview
In this device, the DC current gain is 750 @ 5A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 100mA, 10A.Keeping the emitter base voltage at 2.5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (12A).An input voltage of 350V volts is the breakdown voltage.Maximum collector currents can be below 12A volts.
BDW93CFP Features
the DC current gain for this device is 750 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 2.5V
the current rating of this device is 12A
BDW93CFP Applications
There are a lot of STMicroelectronics
BDW93CFP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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