BDW93CFP
- Mfr.Part #
- BDW93CFP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 12A TO220FP
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 2.5V
- Polarity :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- BDW93
- Contact Plating :
- Tin
- Voltage - Rated DC :
- 100V
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 100V
- Mount :
- Surface Mount, Through Hole
- hFE Min :
- 100
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 5A 3V
- Number of Pins :
- 3
- Max Power Dissipation :
- 33W
- Pin Count :
- 3
- Factory Lead Time :
- 8 Weeks
- Width :
- 4.6mm
- Collector Emitter Breakdown Voltage :
- 100V
- Mounting Type :
- Through Hole
- Height :
- 9.3mm
- JEDEC-95 Code :
- TO-220AB
- Current - Collector Cutoff (Max) :
- 1mA
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- VCEsat-Max :
- 3 V
- Collector Emitter Saturation Voltage :
- 2V
- Number of Elements :
- 1
- Transistor Type :
- NPN - Darlington
- Length :
- 10.4mm
- Case Connection :
- Isolated
- Weight :
- 2.299997g
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 100V
- Number of Terminations :
- 3
- Power Dissipation :
- 33W
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 100mA, 10A
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 350V
- Lead Free :
- Lead Free
- Current Rating :
- 12A
- Max Collector Current :
- 12A
- Package / Case :
- TO-220-3 Full Pack
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Transistor Element Material :
- SILICON
- Datasheets
- BDW93CFP

NPN - Darlington 150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-220-3 Full Pack Tube Through Hole
BDW93CFP Overview
In this device, the DC current gain is 750 @ 5A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 100mA, 10A.Keeping the emitter base voltage at 2.5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (12A).An input voltage of 350V volts is the breakdown voltage.Maximum collector currents can be below 12A volts.
BDW93CFP Features
the DC current gain for this device is 750 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 2.5V
the current rating of this device is 12A
BDW93CFP Applications
There are a lot of STMicroelectronics
BDW93CFP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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