BDX53BG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transition Frequency :

4MHz

Transistor Element Material :

SILICON

Number of Elements :

1

hFE Min :

750

Package / Case :

TO-220-3

Max Power Dissipation :

65W

Collector Base Voltage (VCBO) :

80V

Lead Free :

Lead Free

Number of Circuits :

8

Case Connection :

COLLECTOR

Transistor Type :

NPN - Darlington

Number of Terminations :

3

Surface Mount :

No

Base Part Number :

BDX53

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Current Rating :

8A

Mounting Type :

Through Hole

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Pbfree Code :

yes

Max Collector Current :

8A

Polarity :

NPN

Pin Count :

3

Published :

2007

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 3A 3V

Terminal Finish :

Tin (Sn)

Operating Temperature :

-65°C~150°C TJ

Collector Emitter Voltage (VCEO) :

80V

Vce Saturation (Max) @ Ib, Ic :

2V @ 12mA, 3A

Transistor Application :

AMPLIFIER

Current - Collector Cutoff (Max) :

500μA

Packaging :

Tube

Voltage - Rated DC :

80V

JESD-609 Code :

e3

Element Configuration :

Single

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Emitter Base Voltage (VEBO) :

5V

Factory Lead Time :

2 Weeks

Radiation Hardening :

No

JEDEC-95 Code :

TO-220AB

Collector Emitter Saturation Voltage :

2V

Number of Pins :

3

Collector Emitter Breakdown Voltage :

80V